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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications. Features * High DC current gain * Built-in a damper diode at E-C TO-252 Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C) ..................................................................................... 20 W * Maximum Voltages and Currents (Ta=25C) BVCBO Collector to Base Voltage..................................................................................... 100 V BVCEO Collector to Emitter Voltage.................................................................................. 100 V BVEBO Emitter to Base Voltage............................................................................................ 5 V IC Collector Current............................................................................................................... 5 A Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 5 1 100 Typ. Max. 10 10 2 2 4 4.5 2.8 12 200 Unit V V V uA uA mA V V V V K pF Test Conditions IC=1mA IC=30mA IE=1mA VCB=100V VCE=50V VEB=5V IC=4A, IB=16mA IC=8A, IB=80mA IC=8A, IB=80mA VCE=4V, IC=4A VCE=4V, IC=4A VCE=4V, IC=8A VCB=10V *Pulse Test: Pulse Width 380us, Duty Cycle2% HJ122 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 10000 Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 2/4 Saturation Voltage & Collector Current hFE @ VCE=4V Saturation Voltage (mV) 1000 hFE 100 1000 VBE(sat) @ IC=100IB VCE(sat) @ IC=100IB 10 1 1 10 100 1000 10000 100 100 1000 10000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 Switching Time & Collector Current 10 VCC=30V, IC=250IB1=-250IB2 Switching Times (us) On Voltage (mV) Tstg 1000 VBE(on) @ VCE=4V 1 Tf Ton 100 1 10 100 1000 10000 0.1 1 10 Collector Current (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 100000 PT=1ms 10000 Safe Operating Area Collector Current-IC (mA) PT=100ms 1000 PT=1s Capacitance (pF) 100 100 Cob 10 10 0.1 1 10 100 1 1 10 100 Reverse-Biased Voltage (V) Forward-VCE (V) HJ122 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 3/4 PD - Tc 25 PD(W) , Power Dissipation 20 15 10 5 0 0 50 100 150 o 200 Temperature-Tc ( C) HJ122 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension A C Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 4/4 Marking: H 122 Date Code J B D Control Code L F G Style: Pin 1.Base 2.Collector 3.Emitter 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HJ122 HSMC Product Specification |
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